Nickel Oxide As Transperent Electrode Engineering Essay

August 26, 2017 Engineering

Researchs on solar cells are systematically traveling on since its find in twelvemonth 1839. Presently research more focussed on increasing efficiency and cut downing cost by altering device construction ; utilizing new and fresh stuffs, surface texturing, light pin downing beds, different substrates and engineerings. Building incorporate photovoltaics ( BIPV ) is one of the novel and demanding engineering which focuses on incorporating photovoltaic energy on to the construction of edifice ( building stuffs ) . BIPV has given room for development of Smart devices for several applications such as smart windows which allow merely ambient light inside house and control of sum of light come ining inside house.

K Nama Manjunatha, Emerging Technologies research Centre, Hawthron Building, De Montfort University, Leicester, UK, Tel: +447402422822,

Electronic mail: krishna_nm @

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Though there is immense growing in PV sector, still its use is merely 0.1 % in the universe. This is chiefly because of fabrication, stuff and installing costs of crystalline PV devices. Even in BIPV there are challenges about how to incorporate PV devices straight on stuffs used for edifice buildings.

A brick, tile, slate or window glass with added functionality of bring forthing energy from sunlight sounds like good construct and contribute for attractive architecture with eco-friendly constructs of bring forthing energy. Tile integrated with PV cells will function its demand by two ways ; conventional map as barrier against elements and beginning of energy. More extra maps are ; Photo-catalytic activity of TiO2 nanoparticles for decompositions of air pollutants [ 1 ] . Better aesthetics, integrating, low cost and no installing cost make it possible for attractive construct of solar tile. In a manner to recognize PV tiles/brick ( here termed as Solar tiles/brick ) , An extended literature reappraisal gave few studies on thin movie solar cells which can be integrated to different substrates [ 2 ] [ 3 ] [ 4 ] and old work on thin movie solar cells In EMTERC ( Emerging Technologies Research Center ) [ 5 ] gave an thought to prove and recognize BIPV theoretical accounts.

Goal of this work is to develop solar cells on Building building stuffs. To accomplish this end, work is chiefly divided into three undertakings ; 1 ) choice and optimisation of crystalline conductive oxide, 2 ) fiction of thin movie solar cell on trial substrate ( glass ) 3 ) testing and Integration of thin movie solar cells on thin movie solar cells on edifice building stuffs ( brick, tile, slate, glass, wood and steel ) .

First, crystalline conductive stuff was selected by through research over literature and Nickel Oxide ( NiO ) is besides alternate for crystalline conductive stuff which shows attractive electrochemical, thermoelectric, electric and high chemical opposition belongingss [ 6 ] [ 7 ] [ 8 ] . Recently NiO movies have shown 80 % transmission and above 1 S cm-1 conduction [ 9 ] . This is satisfactory recognized values for TCO stuffs. Now a twenty-four hours ‘s research on NiO has shown that it can be coated on Windowss to move as smart Windowss which will command strength of light come ining inside house by its electro-chromatic belongingss [ 9 ] . NiO is besides used in decomposition of atmospheric pollutants [ 10 ] . Cheaply available resource and allows easy deposition, e.g. it can be deposited by thermic vaporization [ 11 ] . Hence when NiO is used as crystalline electrode in solar cell ; it acts as transparent electrode, allows visible radiation, decompose pollutants, can be used to command light strength when solar cells are integrated on Windowss.

Second, Silicon based thin movie solar cells is opted because of highest efficiency reported till today [ 12 ] . Silicon thin movie engineering is matured and can be easy adapted in industries. Conformability of Si thin movies are really high which allows for easy integrating on tiles, slate and bricks with less impact on their texture and design [ 13 ] . Fabrication of thin movie solar cells was employed with Plasma Enhanced Chemical Vapor deposition ( PECVD ) technique because it allows fiction at low temperatures, utilizes less power and crystalline Si can be deposited on substrates [ 14 ] . PECVD allows unvarying deposition of movie on curved substrates ( traditional roof tiles ) . Importantly, sing environmental jeopardies, Silicon is found to hold minimum effects when compared to CdTe and CIGS engineerings [ 13 ] .

This work provides wide apprehension and model for inorganic PV devices. Theory, rule, experimental methodological analysis and consequences are described to understand belongingss of stuffs and their applications in usage with crystalline metal electrode and solar cells fabricated. Predicted construction of solar cell on edifice building stuffs is shown in figure 1.

Top Contact ( Transparent )

Thin Film ( Silicon )

Bottom Contact


Glaze/ coating

Figure 1 Structure of thin movie solar cell construction on edifice building stuffs.

Solar cell construction

Nickel OxideSolar cell in this work chiefly has thee functional beds, viz. Top contact, Bottom contact and active bed ( Silicon thin movie ) and one passive bed to keep these stuffs working as a substrate. Top contact is a crystalline conductive bed which allows sunshine though it to make active bed. Bottom contact is brooding which helps in light caparison by multiple contemplations and besides act as electrode. Active bed is sand witched between top and bottom contacts ; active bed absorbs photons from sunshine and generates equal sum of charge bearers. Structure of solar cell is shown in figure 23.

Silicon Thin Film



Figure 2 Structure of solar cell demoing three active beds and one passive bed.

Negative Electrode bed

Aluminum is used as schottky contact which besides acts as back contact, anti reflective and cathode bed for solar cell. Barrier tallness of Silicon and Aluminum is 0.81ev which is high when compared to most of the metals except Pt and gold [ 22 ] . But gold is non used in fiction labs as it alters denseness of provinces in Si and Pt is a rare metal and expensive. Hence aluminium was chosen to organize schottky contact which is available copiously and cheaply. Barrier tallness is altered by many factors such as dross, pre-deposition surface readying, temperature, eutectic temperature, grain size in crystal and doping concentration [ 22 ] . Aluminum on poly-crystalline Si besides forms schottky contact [ 32 ] [ 33 ] .

Positive electrode bed

In this work several stuffs have been used for probe of anode stuff. Anode bed has to be crystalline so as to let visible radiation to go through through and should besides be conductive to transport photo-generated bearers. Hence Transparent conductive oxides such as Indium Tin Oxide ( ITO ) , Fluorine doped Tin Oxide ( FTO ) and Nickel Oxide ( NiO ) have been opted to look into in this work. Work maps of all these stuffs are non fixed, since they are changed with sum of O atoms present in the compound [ 8 ] [ 34 ] [ 35 ] [ 36 ] , but work maps are higher than aluminum hence photo-generated bearers are easy collected at several electrodes. Work maps of these stuffs are really near to work map of Si there by set uping ohmic contact. Average work maps of ITO are 4.7eV, FTO is 5ev and NiO is 5.2eV which are high when compared with work map of Aluminum which is 4.08eV [ 37 ] [ 38 ] [ 39 ] . These work maps are about near to work map of Si with value 4.95eV [ 37 ] .

Active bed – Silicon thin movie

Silicon can be used undoped or doped with ( p-type or n-type ) stuff to move as active bed or absorber bed. Silicon can be used in different types of solar cells irrespective of schottky solar cell. Silicon is used in signifier of thin movies as deposited, thereby restricting usage of Si wafers which are really expensive. Silicon deposited in signifier of movie can be controlled by the by different parametric quantities or depositions techniques so as to obtain crystalline, poly-crystalline or formless in nature, but their efficiency decreases from individual crystal Si to formless Si [ 30 ] . In this work probe is focused on un-doped and doped ( phosphine n-type dopant ) Si thin movies. Besides it is extended to polycrystalline and formless Si movies. All types of Si movies will be significantly investigated on NiO positive electrode with aluminium negative electrode. Testing and comparing will be performed with ITO and FTO electrodes with aluminium used as cathode.

Experimental Detailss

This subdivision will depict the consecutive processs used for fiction of thin movie solar cells which include all the procedure from cleaning to deposition of each bed which is associated in device construction.

Preparation of edifice building stuffs

Several stuffs have been used in building of edifices, but merely those stuffs used for building in which they are exposed to sunlight can be used for integrating of PV devices on them. Materials like Steel, Brick, Roof tile, Slate, Vitreous tile, Plastic and wall tiles are used in this work for probe ( See figure 25 ) . Bricks, granite and tiles were purchased from Marley Eternit Ltd. Slate, roof tile were purchase from Redland bricks. Steel and plastic is purchased from Parker steel company. To prove integrating of solar cells to these stuffs which act as substrate, they were cut into 3 X 3 cm2 and cleaned consecutive with H2O, soap H2O, de-ionised H2O and dried in air.

Figure 3 Several stuffs collected for probe to be used as substrates for solar cells.

Cleaning of other substrates

There were four chief trial substrates used in this work, viz. , corning glass slides, ITO coated glass slides and FTO coated Glass slides were purchased from Sigma Aldrich, P-type Silicon wafer. Substrate cleaning involved in this work is chiefly chemical cleansing which was performed in Class 100 clean room in which drying was done in Laminar flow work bench to guarantee dust free environment. Glass slides, FTO and ITO coated slides were cleaned individually by following similar consecutive stairss as explained. Substrates were placed in Beaker incorporating 5 % Decon-90 soap detergent and de-ionised H2O which was placed in extremist sonic bath and sonicated for 30 proceedingss and 2minutes for five times severally. This is followed by puting the samples in Acetone and Isopropyl alcohol individually in two different beakers and sonicated for 15 proceedingss. Then samples were taken out and rinsed in de-ionised H2O for 2 proceedingss and repeated for five times. Slides were so separately cleaned to dry by blowing N from gun. Once dried, samples were stored in slide box until needed.

Thermal Vaporization

Aluminum underside contact and Nickel oxide top contact are deposited by utilizing thermic evaporator. Nickel oxide ( NIO ) pulverization ( 99.99 % ) purchased from Sigma-Aldrich is deposited utilizing tungsten boat under vacuity force per unit area of about 2 ten 10-6 mbar by providing 30 to 40 amperes of current for runing NIO ab initio and bit by bit increasing boulder clay 60 amperes for vaporization. Aluminum ( 99.999 % ) purchased from Sigma-Aldrich is deposited utilizing tungsten filament under vacuum force per unit area of about 2 ten 10A­A­-6 mbar by providing 20 Amperes of current for vaporization. Evaporator was left unattended after vaporization of stuff for one hr so as to convey down the temperature within the chamber and so samples were taken out.

Radio Frequency – Plasma Enhanced Chemical Vapor Deposition ( RF-PECVD )

This procedure is selected in this work chiefly for low temperature procedure and cost effectivity when compared to other techniques. This procedure started by puting substrates in PECVD chamber already deposited by accelerators on one side. In this work different substrates were used for probe, proving and optimisation, viz. ITO coated glass, FTO coated glass, NIO coated glass, Corning glass, P-Type Si wafer. Gallium is used as accelerator for ITO and FTO coated glass and P-type Si wafer. Nitrogen is supplied and evacuated three times to clean the supply tubings and chamber. Chamber temperature is maintained at 4000 degree Celsius, force per unit area is at 200mTorr, RF power is set to 25watt supplied at 13.6 MHz frequence. Plasma is ab initio created by go throughing Hydrogen gas into the chamber at the rate of 100 Standard Cubic Centimeter per minute ( SCCM ) for 5 proceedingss. Following this Silane ( SiH4 ) gas is introduced into the chamber at 20 SCCM for growing of Si nanostructures. Some Si nanostructures were besides grown by doping with phosphine so as to obtain n-type Si nanostructures. This doping was done by coincident supply of saline gas with phosphine gas into the chamber. Later force per unit area within the chamber was reverted back and temperature was brought down to room temperature. Then samples were removed after sufficient chilling of chamber for farther probes and experiments.

Decomposition procedure in this experiment can be described by following chemical reaction:

SiH4 ( gas ) Decomposition [ SiHm ] Si + m [ H ]

Above procedure is repeated for several times by changing parametric quantities like doping, sum of gas flow, deposition clip, doping concentration and force per unit area. These parametric quantities are described separately

Consequences and Discussion

Optimization and word picture of crystalline conductive Ni oxide

Optimization of Nickel oxide ( NiO ) is one of the of import undertakings in this work. As explained earlier, due to interesting belongingss of NiO this stuff was chosen to look into and work more belongingss so as to accomplish end. Green farinaceous pulverization of NiO ( molecular weight – 74.69 g/mol, Density – 6.67g/cm3 ) was used in thermic vaporization procedure. It was rather hard for vaporization since the demand of high current to sublimate the stuff. Deposited movies were so investigated utilizing several techniques as discussed.

Transparency of NiO movies were investigated utilizing UV-Vis measurings from wavelengths runing between 400nm to 700nm which is of lone involvement for solar cell.. Raw information obtained is plotted for transmission ( in per centum from 0 to 100 ) along Y-axis and wavelength in nanometres along X-axis ( see figure 30 and 31 ) .

Figure 4 transmission of NiO movie deposited at different thickness in seeable part.

From the secret plan seen above it is observed that thickness of movie is reciprocally relative to transparence. Which means as thickness of movie is increased, transmission is diminishing. . It can be observed that transmission is about unvarying between these wavelengths, which is good for soaking up of all the visible radiation in these wavelengths from sunshine. Table 1 shows mean transparence at seeable wavelength. Transmittance values can be increased by tempering in presence of O [ 9 ] .

Table 1 Average transmission at seeable wavelength for NiO movies at different thickness.

Thickness ( nanometer )








Average Transmittance ( % )








Bandgap computations are performed by Tauc secret plan, which is plotted by photon energy ( vitamin E ) in negatron V on X-axis and merchandise of soaking up coefficient with photon energy ( E ) to the power of denseness of provinces ( N ) , i.e. ( ( I±E ) N ) on Y axis. Calculations for Tauc-gap besides called as Bandgap is determined by utilizing expression [ 42 ] :

( I±E ) n = A ( E-Eg )

Where, I± is absorption coefficient, Eg is band spread, H is Plank ‘s changeless, n = denseness of provinces ( n = 2 for direct bandgap stuffs and n = A? for indirect bandgap stuffs.

Sing value N = 2, mean set spread of NiO is found to be 3.60 electron volt ( see figure 32 ) . Band spread value obtained is about the same as reported by [ 8 ] [ 9 ] [ 39 ] . Value of n= A? did non give meaningful set spread value which is reported for NIO as a direct set spread semiconducting material from literature.

FTIR spectrometry is used to find quality, chemical composing and construction of NiO bed. Figure 33 shows important extremums of NiO movie deposited on Si wafer utilizing thermic vaporization in the scope of 400-4000cm-1. Top out originating at 1108 cmA­-1 corresponds to SiO2 bed between Si wafer and NiO movie and extremum at 608 cm-1 is attributed for Si severally [ 49 ] . Weak soaking up at 662 cm-1 corresponds to Ni-OH quiver [ 50 ] . Some sets below 500 cm-1 ( inset figure 7-4 ) , viz. 415 cm-1,458 cm-1 and 473cm-1 correspond to quiver of Ni-O [ 50 ] [ 51 ] [ 52 ] . Broad soaking up set centered at 3700 cm-1 is attributed to O-H stretching quivers and H-O-H bending quivers is assigned to weak set across 1630 cm-1 [ 34 ] . Peaks of carboxyl and hydroxyl groups can originate from air which is present in the equipment since measurings are non performed in vacuity.

EDX probe is performed on NiO movies entirely so as to look into drosss or taints in the movie. Since FTIR analysis showed CO2 and hydroxyl groups in the movie ; it is known from anterior cognition that FTIR spectrometer do non mensurate under vacuity conditions and these drosss which are present in air is being measured during instrumentality. Figure 40 shows EDX analysis of 55nm thickness NiO movie which depicts different stuffs nowadays in the movie and their concentrations. Extremums of Oxygen and Nickel correspond to NiO conductive electrode, Peak of Si and K corresponds to material nowadays in glass. Merely impurity nowadays in this movie was sodium otherwise quality of movie is good and no presence of carboxyl and hydroxyl compounds.

Refractive indices ( N ) is utile for word picture of stuffs and to cognize composing in deposited movie, in this work NIO movie refractile index was measured utilizing Ellipsometery for all the above mentioned thickness in earlier subdivisions. Average refractile index of NiO movies in this work was measured to be 2.19 ( A± 0.08 measured at different musca volitanss across the movie ) which are about same as those reported by [ 53 ] and [ 54 ] who had measured it to be 2.37. Difference observed is because of drosss present in movie as shown in FTIR spectra and EDX analysis.

Electrical measurings for NiO movies were performed to find its opposition, sheet opposition, conduction and contact opposition. Measuring these parametric quantities will assist in half a manner to optimise NiO movies. First, I-V measurings are performed for deposited spread cells and incline of this secret plan will find 1/R from which opposition is calculated ( see figure 34 ) . Looking at IV characterizes which is additive confirms that Al acts as ohmic contact with NiO ( see figure 34 ) . Graph for one sample in which one spread cell has been selected to demo as an illustration and all other values for different samples are shown in table 3.

Measure of opposition in thin movies is termed as Sheet opposition. This is accepted merely for planar systems in which thin movies are considered as planar entities. Hence flow of current is along the plane of movie. Similarly sheet opposition is calculated by Transmission line method ( TLM ) for transparent conductive NiO movie in this work. It is besides of import to qualify contact opposition ( Rc ) for devices holding contacts or used as contacts. In this work NiO is used as top contact hence it is importance to understand contact opposition as how Rc would impact device public presentation and contacts might degrade device public presentation by shooting minority bearers.

Transmission line method is used to cipher different parametric quantities in this work ; because value of thickness is non required for computations. Quartz microbalance reader and ellipsometer showed different thickness for the deposited movie and this value when used in computations would give incorrect consequences. NiO movie of 42nm thickness is taken as illustration and secret plan of opposition ( R ) verses contact spacing ( vitamin D ) from which sheet opposition and contact opposition can be extracted is shown in figure 35. Valuess for other samples are shown in table 3. In this work Sheet opposition of NiO movie is measured to be 4.5KI©/a-? for 42nm movie thickness. From table 3 it is observed that as thickness additions sheet opposition and contact opposition lessenings. Which means thickness of movie is reciprocally relative to sheet opposition.

Finally, after obtaining values of sheet opposition and transparence of NiO movie at different thickness ; following is to optimise best thickness at which sheet opposition and transparence is accepted. Figure 36 shows dependance of transparence and sheet opposition.

Figure 7-7 shows that as thickness additions transmission and sheet opposition lessenings. For a good music director sheet opposition should be low, therefore thicker movie is preferred. Solar cell needs crystalline conductive electrode with maximal transparence so as to absorb more light otherwise strength of light making active bed would be less, as a effect less photo-generated bearers. Hence dilutant movie is preferred holding highest transparence. But dilutant movie has good transmission but sheet opposition is more and frailty versa. Hence in this work it is better to utilize movie with 55nm thickness which has 41 % of transparence in seeable part which is about same when compared to 42nm movie with 44 % transparence. But electric resistance and sheet opposition is less in 55nm movie when compared to 42nm movie. Since there is no much difference in 55nm movie when compared with 42nm ; 55nm movie is considered to be good and appreciable. Movies with thickness 143nm and 162 nanometer has really less transparence ; though sheet opposition is less, it is non accepted because sum of exposure generated bearers are really less and low opposition does non hold any consequence on this. Because movies with small increased sheet opposition can besides transport these photo-generated bearers. When strength of photon absorbed is really less, there is no necessity of holding low sheet opposition.

Resistivity/Resistance of conductive metal oxides normally varies with temperature [ 34 ] . In this work Nickel oxide thin movies are placed in PECVD chamber for growing of Si nanostructures where temperature is 400oc. Hence alteration in electric resistance with regard to increase in temperature is investigated and secret plan of the same is shown in figure 37.

In this work it is found that electrical belongingss of NiO movies are governed by vacancies of O and besides from literature it has been seen that opposition varies in respect to alter in temperature, sum of O, warming and chilling. In slow temperature alterations ( Fig. 37 ) movie opposition depends on temperature dependent O content and non on chilling and heating conditions. Hence this measuring tells about O in and out diffusion procedure. Three parts can be seen in the graph, in first part ( temp & lt ; 425K ) shown in black colour corresponds to increase in temperature during which O diffusion might be slow and vacancies concentration is unchanged. This can besides be thought as feature of metallic conduction. This metallic behaviour at mensural temperatures could be because of to a great extent doped semiconducting materials at which high self-doping of movie might happen and oxygen vacancies which create dross set will be overlapping with conductivity set. Hence opposition is controlled by fluctuations in bearer mobility which is effect of sprinkling of negatrons by vacancies of O [ 40 ] [ 45 ] [ 6 ] [ 52 ] [ 57 ] [ 58 ] .

Temperatures from 425K – 675K there is crisp addition in opposition with regard to temperature can be seen and it is explained by premise that due to alter in O vacancies concentration, self-doping of stuff is governed by O in-diffusion procedure. Hence it can be concluded that opposition at this temperature depends on exchange of O between air and movie which consequences in electron-hole carries but substituted by O vacancies. In part three ( ruddy coloring material ) , opposition additions exponentially with cut downing temperature. Then one should believe of emerging temperature dependent energy spread between dross set of O vacancies and conductivity set of semiconducting material Nickel oxide. There may be opportunities of lessening in vacancy mobility, decomposition might hold occurred at high temperature and distortion in contacts taking to alter in contact opposition [ 40 ] [ 45 ] [ 6 ] [ 52 ] [ 57 ] [ 58 ] . Since this experiment was performed in unfastened air ; oxygen present in ambiance was made easy to respond with NiO movies as a effect alteration in opposition is observed. A NiO movie when heated under vacuity in PECVD chamber, alteration in opposition is non absorbed in this work.

In stuff scientific discipline, many phenomena are governed by thermally activated procedure, which means some thermic energy is required for some procedure to go on. This can happen by get the better ofing energy barrier referred as activation energy. By increasing temperature some sum of thermic energy is given to stuff in which atoms/molecules are made to excel activation energy. Thermally activated procedure is determined by,


Where omega = thermally activated phenomenon, EA= activation energy for the procedure, Ao= invariable, R=universal gas invariable ( 8.314 JA·mol-1.K-1 ) and T= temperature ( Kelvin ) . Activation energy divided by gas invariable “ Roentgen ” is determined by incline of curve plotted with ln ( omega ) on y-axis and ( 1/T ) in X-axis. Hence Activation energy for NiO movie is determined to be 0.090eV which is about same when compared with reported value of 0.10eV and 0.085eV from literature [ 59 ] .

Word picture and analysis of active bed

This subdivision discusses 2nd of import undertaking of lodging thin movie Si solar cells after prosperity of obtaining semi-transparent conductive NiO movie. Consequences presented in this subdivision are harmonizing to order of work that took topographic point consecutive. Aim of this undertaking was to lodge thin movie solar cells on foreign substrates which can be done merely if grown Si structures show photoconduction and obtaining working solar cell on trial glass substrate.

Initially, Si thin movies were deposited individually on glass slide coated with ITO as crystalline conductive electrode by RF-PECVD procedure. Silicon nanowires were grown utilizing catalyst stuff ( permission non granted to advert name ) which is coated by simple pigment coppice on top of ITO and so placed in PECVD chamber. SiNW were grown in RF-PECVD chamber at 4000c temperature, 25watts RF power and 200mtorr force per unit area throughout the procedure. Hydrogen plasma was created by go throughing H2 at 100sccm for 5 proceedingss, along with H gas flow SiH4 is passed at 20sccm for 5 proceedingss and go oning with the flow of above mentioned gases ; phosphine is so passed at 10sccm for one hr. Phosphine was passed so as to dope Si nanowires thereby obtaining N-type SiNW. Totally deposition took topographic point for one hr 10 proceedingss. Later aluminum top contact of 150nm thickness was deposited utilizing mask. Aluminum acts as schottky contact to n-type Si. Concluding construction is ITO/i-Si/n-Si/Al. This sample was so investigated by IV features and this indicated failure consequences with no current being measured for applied electromotive force. Reason for failure might be possibility of aluminium which has leaked in spread between nanowires and non much aluminium on top to move as electrode. Some possibility could be that catalyst/Si-SiNW might non be doing good contact with ITO. It has besides been reported that ITO movies when exposed to 3000c, its opposition addition by three times. This is because of decreased O vacancies at higher temperatures which really maps as negatron provider [ 60 ] .

Then an effort was made to alter Conductive oxide electrode from ITO to FTO, along with this accelerator was changed to gallium since it is good accelerator for Silicon nanowires growing [ 30 ] . ITO and FTO coated glass slides were deposited by 55nm thin movie of Ga by thermic evaporator. These samples were so subjected to SiNW growing with same conditions mentioned earlier but procedure is carried out merely for 20 proceedingss without doping phosphine. Again silicon constructions deposited on ITO did non demo diode features and conduction. Interestingly Si nanostructures deposited on FTO samples showed diode features but once more there was no photoconduction. This feature shows that there is some schottky barrier which is formed by aluminium with SiNW because difference in work map of aluminium and Si is big which creates schottky barrier [ 37 ] . It is besides absorbed that threshold electromotive force is really high holding the value of about 6V ( A± 0.4 ) measured for eight devices on same sample. Hence this is assumed to be photodiode demoing similar features. Since schottky rectifying tube was successful in fiction, farther probe was carried to manufacture similar thin movie schottky rectifying tube for NiO electrode alternatively of FTO under same conditions. This device showed non ideal schottky rectifying tube features ( dual rectifying tube features ) which is non same when compared to earlier device fabricated as FTO/SiNW/Al. Increase in current can be observed in illuminant conditions but Voc and Isc features of solar cell is non observed.

Finally, fiction followed in following sequence with some changed parametric quantities. Glass coated with 41nm NiO is deposited by 50nm Ga on top by thermic vaporization so Silicon nanostructures are grown for 5 min with saline at gas flow rate of 20sccm so as signifier schottky contact with NiO. Following Saline flow, phosphine ( PH3 ) is introduced at 10sccm. Whole procedure was carried out 400deg temperature, 200mtorr force per unit area with 25watts RF power for 30 proceedingss. Wholly procedure was performed for 40 proceedingss. Later Aluminium was deposited on top at 200nm thickness. Finally construction is looks like NiO/i-Si/n-Si/Al. Fabricated construction was so investigated to detect the growing of Si nanowires. Figure 43 shows SEM images of Si nanowires grown on Ga accelerator.

Figure 43 SEM images of SiNWs morphology ; nanowires standing perpendicular with gallium tips.

Nanowires had dumbly grown and have grown rather consecutive. It is besides seen that several nanowires are coming out from individual nanowire which looks like tree with subdivisions. Reason for this could be that if accelerator is thicker it could profit for extra growing or there might be possibility of accelerator fluxing down the nanowire and could let Si to turn in sideways. Sometimes there might be possibility of Ga taint in nanowires which act as accelerator during the growing procedure and allows Si to turn at those peculiar sites. It was possible to whizz for one individual nanowire and its thickness measured was 165.9nm.

Thin movie of Si is so analysed in Uv-Vis spectrometer for transmission. Approximately 75 % visible radiation is being absorbed by the active bed. Further probes were carried on to look into quality of movie in respect to drosss by EDX analysis. Figure 44 depicts different stuffs nowadays in the movie. Extremums of Oxygen and Nickel correspond to NiO conductive electrode, Aluminum movie corresponds to metallic electrode, Peak of Si corresponds to silicon nanostructures and material nowadays in glass. Peak of K corresponds to stuff of glass. Merely impurity nowadays in this movie was sodium otherwise quality of movie is good.

Figure 5 EDX analysis of fancied solar cell on glass.

This construction is so investigated for electrical belongingss. Good features of solar cell are observed from I-V features but graph expressions interesting with non holding ideal diode features during contrary prejudice ( See figure 45 ) which had to be investigated farther. Open circuit electromotive force and short circuit current are measured straight from graph ( inset – Figure 45 ) . Other features of solar cell ; Fill factor and Efficiency were calculated from the extracted values of I-V curve. All the secret plans shown here are explained in item by taking illustration of one solar cell device whose parametric quantities were explained above.

Curve which appears to be level is because of consequence caused from parasitic oppositions which really cut down the squareness of ideal rectifying tube. Above consequences are shown for device with country 0.0176cm2 and power end product of light beginning is really less about 8.58mW/m2. This yields less efficiency which is shown in above tabular array and transparence of NiO is besides less and added some parasitic oppositions which really reduced the squareness of curve in 4th quarter-circle. Increasing thickness on NiO outputs less efficiency, since transparence lessenings as thickness additions which reduces soaking up of visible radiation at active bed. Hence more probes have to be carried on to optimise NiO thin movies so as to heighten efficiency of solar cells. All measured parametric quantities, viz. Voc, Isc, FF, PCE, Vm, Im, and maximal power ( Pm ) are shown in table 6.

Open circuit electromotive force majorly depends on work map of schottky barrier metal. Low Voc value could besides be because of barrier debasement by inter-diffusion [ 23 ] . Some complexnesss of stuffs, temperature, deposition rate, doping, etc. chiefly determine the activity of active bed. It has been reported that Si constructions grown by PECVD procedure normally contain adhering defects, interstitial atomic and molecular H, some nothingnesss which really affect the activity of photo-generation of bearers.

Curve in underside right quarter-circle is level, which indicates increased sheet opposition and decreased shunt opposition. An ideal solar cell should hold infinite shunt opposition and series opposition should be every bit low as possible ( close to zero ) . Shunt opposition is by and large caused by escape current which besides affects by increasing incline of current constituent. Flattened part in 4th quarter-circle could be ground of decreased shunt opposition which is caused by more leakage current. This could be one ground for which current in 3rd quarter-circle can be considered as escape current. Normally leakage current arises from pinholes and recombination traps in active bed [ 4 ] . It is reported that escape can besides happen due to shunting of surface escape along with junction escape [ 62 ] .

Until probe on NiO movie which is p-type semiconducting material and its influence on Si are understood contrary current ca n’t be concluded as escape current. NiO is a P-type semiconducting oxide and it could hold formed junction with n-type Si to organize P-N junction or there might be possibility of Double schottky junction which might demo I-V features as seen in figure 46.

For a schottky contact, work map of metal should be greater than n-type semiconducting material, likewise work map of Si is 4.6 – 4.8eV and work map of Ni is 5.1 – 5.35 electron volt and add-on of O to nickel can alter work map by A± 0.4 electron volt to that of nickel work map which in this work work-function might hold increased and organizing a schottky junction at NiO and n-type Si interface [ 37 ] [ 22 ] [ 63 ] [ 64 ] . It is shown that work map of Nickel oxide can hold value of 5.67eV [ 65 ] hence this clearly indicates that contrary prejudice current is non leakage current and it is forward prejudice of another schottky junction.

Therefore this type of construction is normally referred as Double rectifying tube and their features looks similar to the I-V features obtained in this work. This dual schottky rectifying tube will hold no contrary prejudice since either of rectifying tube will work in frontward prejudice at different conditions. For wonder, aluminium points with 0.176cm2 is used as forepart and back contacts for the same active bed and still it showed dual rectifying tube features. This is because n-type Si with aluminium will organize schottky junction and both the contacts acted as schottky junction.

Solar cells are exposed to sunlight for old ages ; therefore stableness of solar cell is besides of import to mensurate if its efficiency and public presentation is consistent. In a manner to understand stableness, Voc is measured with regard to clip for 1000 pulsations under light conditions ( Solar simulator with AM 1.5 visible radiation beginning ) . Figure 46 shows semi-logarithmic graph where electromotive force decay is observed with alteration in clip. Small alteration is observed about 0.03V for 1000 pulsations. Similarly alteration in Isc is measured with regard to clip and it is observed to increase with clip. Measured addition current for one hr is 6.5 nano-amperes. This shows that device is rather stable and farther optimisation could minimise the alterations. When both are observed together with alteration in clip ; Voc lessenings and Isc increases thereby fill factor will non alter much since if one parametric quantity decreases other parametric quantity additions ( alteration is non every bit relative and premise is merely for approximative values ) .


NiO transparent conductive oxide was optimized to incorporate with solar cell, nevertheless efficiency in footings of transparence is non first-class when compared with ITO and FTO which are commercially used. Interestingly it showed low value of electric resistance and from this work it is shown that deposition of NiO can be performed by thermic vaporization which is easiest and cheapest technique. Fabricated NiO movies showed small addition in opposition with addition in temperature and EDX analysis has proved good quality of movie with lone taint of Na. Several spectrometry and electrical techniques were performed and measured values are close to the values reported in literature. Nickel oxide has been investigated for the first clip at Emerging engineerings research Center in De Montfort university as portion of this work.

Although, solar cell fiction had several failures, it is eventually integrated with NiO thin movies and solar cell was to the full fabricated. Several betterments are done in obtaining Si nanostructures, eventually doping with n-type dross ( phosphine ) showed good schottky contact with aluminium. Grown Si nanostructures were analyzed in SEM and it was observed that nanostructures were thick and dense. EDX analysis depicts merely sodium dross in the fancied solar cell. Though it was non ideal schottky solar cell, a solar cell feature is obtained and was assumed to be dual schottky solar cell or there could be possibility of more leakage current. Efficiency of solar cell was really less which has to be optimized in respect to NiO movies to better efficiency.

Future Scope

After the success of integrating of NiO movie for solar cell and fiction of thin movie solar cell following measure was to incorporate thin movie solar cell on edifice building stuffs. If provided more clip ; probe of the same could hold been performed. In ulterior phase integrating on to constructing building stuffs has to be investigated and this is an interesting and emerging country of research.

Better optimisation of NiO thin movies would heighten transparence and thereby bettering efficiency of solar cell. Research on NiO used as TCO for Si thin movie solar cells have to be more investigated to understand its influence in diverting from ideal rectifying tube feature. Probe of thin movie solar cells by utilizing stuffs other than Si and understanding its compatibility on NiO movie can give better efficiency or might give rise to cheaper solar cells.

Since Nickel acts as accelerator for growing of Si nanowires, some research on NiO to be used as accelerator for the growing of nanowires would bring cheaper solar cells, since another accelerator stuff is non required for growing of SiNWs and attempts to lodge accelerator individually are non necessary. Thereby NiO will supply dual functionality as TCO and accelerator bed.


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